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Adsorption Site-Dependent Mobility Behavior in Graphene Exposed to Gas Oxygen
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SYSNO ASEP 0498916 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Adsorption Site-Dependent Mobility Behavior in Graphene Exposed to Gas Oxygen Author(s) Blechta, Václav (UFCH-W) RID, ORCID
Drogowska, Karolina (UFCH-W) RID
Valeš, Václav (UFCH-W) RID, ORCID
Kalbáč, Martin (UFCH-W) RID, ORCIDSource Title Journal of Physical Chemistry C. - : American Chemical Society - ISSN 1932-7447
Roč. 122, č. 37 (2018), s. 21493-21499Number of pages 7 s. Language eng - English Country US - United States Keywords field-effect transistors ; chemical-vapor-deposition ; walled carbon nanotube ; doped graphene ; layer graphene ; grown graphene Subject RIV CF - Physical ; Theoretical Chemistry OECD category Physical chemistry R&D Projects GA18-20357S GA ČR - Czech Science Foundation (CSF) LTC18039 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support UFCH-W - RVO:61388955 UT WOS 000445711100042 EID SCOPUS 85053787931 DOI https://doi.org/10.1021/acs.jpcc.8b06906 Annotation Transport characteristics of graphene field-effect transistors were measured in situ in oxygen/nitrogen atmospheres and at various temperatures. Mobilities of holes were extracted from transport characteristics as well as the doping level depending on the time of graphene exposure to oxygen/nitrogen atmosphere. The hole mobility showed significant decrease upon the oxygen adsorption to low energy adsorption sites (sp(2) carbon). However, it remained unaffected by the oxygen adsorption to high-energy adsorption sites which are represented by defects, impurities, transfer residuals, edges, and functional groups on graphene. The Dirac point was upshifted for both the low- and high-energy adsorption events. Activation energy of oxygen adsorption/desorption was estimated from temperature-dependent desorption rate coefficients as 215 and 450 meV for the low- and high-energy adsorption sites, respectively. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2019
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