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Design of InGaN/GaN MQW structure for scintillator applications
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SYSNO ASEP 0496205 Document Type A - Abstract R&D Document Type O - Ostatní Title Design of InGaN/GaN MQW structure for scintillator applications Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Zíková, Markéta (FZU-D) RID
Dominec, Filip (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Hájek, František (FZU-D) ORCID
Vaněk, Tomáš (FZU-D) ORCID
Jarý, Vítězslav (FZU-D) RID, ORCIDNumber of authors 9 Source Title Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. - : University of Warsaw, 2018
S. 256-256Number of pages 1 s. Action International Symposium on Growth of III-Nitrides ISGN-7 Event date 05.08.2018 - 10.08.2018 VEvent location Warsaw Country PL - Poland Event type WRD Language eng - English Country PL - Poland Keywords InGaN/GaN ; MQW structure ; scintillator Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA16-11769S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation Nitride semiconductor heterostructures are widely used for light emitting and laser diodes as well as for high power and high frequency applications. Recently, new application for InGaN/GaN multiple quantum well (MQW) heterostructures has emerged. It was shown that these heterostructures, if properly designed, can work as very efficient fast scintillators with long lifetime due to their radiation resistance. Although this application does not have such a massive market as LEDs, LDs or HEMTs, there is still very strong demand for fast scintillators and detectors of ionizing radiation due to the expansion of new diagnostic methods in medicine, electron microscopy and nuclear physics. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
Number of the records: 1