Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells

Number of the records: 1

1.

SYSNO	0496195
Title	Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells
Author(s)	Zíková, Markéta (FZU-D)_RID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Hubáček, Tomáš (FZU-D)_ORCID Dominec, Filip (FZU-D)_{RID, ORCID} Oswald, Jiří (FZU-D)_{RID, ORCID} Kuldová, Karla (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Corespondence/senior	Zíková, Markéta - Korespondující autor
Source Title	Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. S. 156-156. - : University of Warsaw, 2018
Conference	International Symposium on Growth of III-Nitrides ISGN-7, 05.08.2018 - 10.08.2018, Warsaw
Document Type	Abstrakt
Grant	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	PL
Keywords	InGaN/GaN * quantum wells * scintillator * low temperature buffer
Permanent Link	http://hdl.handle.net/11104/0289021

Number of the records: 1