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Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells
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SYSNO ASEP 0496195 Document Type A - Abstract R&D Document Type O - Ostatní Title Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells Author(s) Zíková, Markéta (FZU-D) RID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAINumber of authors 8 Source Title Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. - : University of Warsaw, 2018
S. 156-156Number of pages 1 s. Action International Symposium on Growth of III-Nitrides ISGN-7 Event date 05.08.2018 - 10.08.2018 VEvent location Warsaw Country PL - Poland Event type WRD Language eng - English Country PL - Poland Keywords InGaN/GaN ; quantum wells ; scintillator ; low temperature buffer Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation In our laboratory we prepare InGaN/GaN quantum wells (QWs) that should be used in scintillating structures with fast and strong luminescence response with short decay time. Unfortunately, in the photoluminescence (PL) spectrum there is also a slow broad defect band at around 470 nm besides the excitonic peak at around 420 nm. We assume that the main defect band contribution comes from the five lowest QWs that face the transition from higher growth temperature of GaN buffer to the lower growth temperature of InGaN QWs. SIMS data of selected samples prove the contamination under the lowest QWs and show that some elements are contaminating not only a thin region beneath QWs, but also the QWs themselves. We expect that the contamination is due to lowering the temperature which is a well-known phenomenon and thus we introduce a low temperature (LT) buffer under QWs. From PL spectra we can see that the sample with LT buffer has more intense excitonic peak and partly suppressed defect band.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
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