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Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells

  1. 1.
    Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
    Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells.
    Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 156-156.
    [International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    http://hdl.handle.net/11104/0289021
Number of the records: 1  

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