Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers

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SYSNO	0496190
Title	Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers
Author(s)	Hubáček, Tomáš (FZU-D)_ORCID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Zíková, Markéta (FZU-D)_RID Oswald, Jiří (FZU-D)_{RID, ORCID} Kuldová, Karla (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Corespondence/senior	Hubáček, Tomáš - Korespondující autor
Source Title	Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. S. 155-155. - : University of Warsaw, 2018
Conference	International Symposium on Growth of III-Nitrides ISGN-7, 05.08.2018 - 10.08.2018, Warsaw
Document Type	Abstrakt
Grant	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
	GA16-15569S GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	PL
Keywords	InGaN * QW capping * MOVPE
Permanent Link	http://hdl.handle.net/11104/0289016

Number of the records: 1