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Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers
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SYSNO ASEP 0496190 Document Type A - Abstract R&D Document Type O - Ostatní Title Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers Author(s) Hubáček, Tomáš (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAINumber of authors 7 Source Title Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. - : University of Warsaw, 2018
S. 155-155Number of pages 1 s. Action International Symposium on Growth of III-Nitrides ISGN-7 Event date 05.08.2018 - 10.08.2018 VEvent location Warsaw Country PL - Poland Event type WRD Language eng - English Country PL - Poland Keywords InGaN ; QW capping ; MOVPE Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-15569S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation In our work we will show how to significantly increase the In content in QWs without lowering the QW growth temperature. We have studied different growth modes of InGaN/(In)GaN heterostructure while the QW growth parameters (temperature, pressure, flow, etc.) were kept constant. We have only changed parameters during the temperature rise to the barrier growth and parameters during the barrier growth. We have introduced a small TMIn flow immediately after the QW growth and observed not only increased concentration of In in the structure (in both, QW and barrier) but also strong increase of the growth rate (confirmed by SIMS and XRD measurements). We explain this phenomenon by suppression of In desorption during the initial phase of the barrier growth. Photoluminescence spectra of samples with different combinations of (In)GaN QW capping and (In)GaN barriers will be shown and discussed. Luminescent homogeneity of these samples was characterized by PL intensity maps.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
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