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Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers
- 1.0496190 - FZÚ 2019 RIV PL eng A - Abstract
Hubáček, Tomáš - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 155-155.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : InGaN * QW capping * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0289016
Number of the records: 1