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Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure
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SYSNO ASEP 0496160 Document Type A - Abstract R&D Document Type O - Ostatní Title Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure Author(s) Hájek, František (FZU-D) ORCID
Zíková, Markéta (FZU-D) RID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Oswald, Jiří (FZU-D) RID, ORCIDNumber of authors 5 Source Title Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. - : University of Warsaw, 2018
S. 125-125Number of pages 1 s. Action International Symposium on Growth of III-Nitrides ISGN-7 Event date 05.08.2018 - 10.08.2018 VEvent location Warsaw Country PL - Poland Event type WRD Language eng - English Country PL - Poland Keywords InGaN/GaN ; quantum wells ; doping ; luminescence Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA16-11769S GA ČR - Czech Science Foundation (CSF) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation Luminescence properties of InGaN/GaN multiple quantum wells (MQWs) are influenced by internal spontaneous and piezoelectric fields. These can be at least partially suppressed by doping with shallow impurities. This work shows impact of Si doping in different layers of MQWs on photoluminescence and cathodoluminescence of InGaN/GaN MQWs. To explain observed trends, band structure is also simulated. From our results emerges demand for Si doping at least under MQW area to obtain higher luminescence intensities. On the other hand, such doping also enhances unwanted defect luminescence which is detrimental for using InGaN MQWs as scintillation material.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
Number of the records: 1