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DC magnetron sputtering of ZnO thin films
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SYSNO ASEP 0487114 Document Type A - Abstract R&D Document Type O - Ostatní Title DC magnetron sputtering of ZnO thin films Author(s) Chang, Yu-Ying (FZU-D)
Remeš, Zdeněk (FZU-D) RID, ORCIDNumber of authors 2 Source Title Book of Abstracts of the Student Scientific Conference on Instruments and Methods for Biology and Medicine /7./. - Kladno : FBME CTU, 2017
S. 9-9Number of pages 1 s. Publication form Online - E Action Student Scientific Conference on Instruments and Methods for Biology and Medicine /7./ Event date 05.05.2017 - 05.05.2017 VEvent location Praha Country CZ - Czech Republic Event type CST Language eng - English Country CZ - Czech Republic Keywords ZnO ; magnetron sputtering ; PDS Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GC16-10429J GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation Zinc Oxide (ZnO) is a semiconductor with a wide band gap, large exciton binding energy, high electron mobility, high refractive index, high biocompatibility and diversity of nanostructure shapes which makes it suitable for many applications in the optoelectronic devices, optical sensors, and biosensors. Our samples are the nominally undoped ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma and the aluminium doped ZnO thin films deposited by DC magnetron sputtering of ZnO:Al target in the argon. After hydrogen plasma treatment, the increase of the infrared optical absorption, related to free carrier concentration, is detected below the optical absorption edge. The increase of the optical absorption correlates with the increase of the electrical conductivity related to the increase of the free carrier concentration. On the other hand, after oxidation and thermal annealing in air, the optical absorption is significantly reduced in the infrared region and the electrical resistivity increases. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
Number of the records: 1