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Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures
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SYSNO ASEP 0479300 Document Type C - Proceedings Paper (int. conf.) R&D Document Type O - Ostatní Title Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures Author(s) Kuldová, Karla (FZU-D) RID, ORCID
Kretková, Tereza (FZU-D)
Novotný, Radek (FZU-D)
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Pangrác, Jiří (FZU-D) RID, ORCID, SAINumber of authors 5 Source Title EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. - Grenoble, 2017 / Eymery J. Pages s. 40-40 Number of pages 1 s. Action EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy Event date 18.06.2017 - 21.06.2017 VEvent location Grenoble Country FR - France Event type EUR Language eng - English Country FR - France Keywords MOVPE ; GaN ; photoluminescece ; Raman spectroscopy ; macroscopic defects Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Institutional support FZU-D - RVO:68378271 Annotation GaN and InGaN/GaN heterostructures are promising materials for many optoelectronic devices, such as light emitters, high-power and high-frequency electronics, detectors of ionizing radiation, scintillators. Great attention has been paid to optimize growth parameters and decrease density of dislocations and defects in this material. A little outside attention remains study of macroscopic defects. We focus on the influence of macroscopic defects on photoluminescence (PL) of GaN/InGaN multiple quantum well (MQW) structures and present a Raman spectroscopy study of these regions. Some GaN and InGaN/GaN samples exhibit large dark areas with PL decreasing by several orders of magnitude, in the centre of which is a structural defect. Traces of iron, stainless steel or oxides of iron were detected in majority of studied large dark areas by SEM microscopy with EDX and Raman spectroscopy.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
Number of the records: 1