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III/V-on-Si interfaces: optical in situ control, surface science and DFT
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SYSNO ASEP 0471513 Document Type A - Abstract R&D Document Type O - Ostatní Title III/V-on-Si interfaces: optical in situ control, surface science and DFT Author(s) Supplie, O. (DE)
Romanyuk, Olexandr (FZU-D) RID, ORCID
May, M.M. (DE)
Brückner, S. (DE)
Susi, T. (AT)
Paszuk, A. (DE)
Koppka, C. (DE)
Nägelein, A. (DE)
Steidl, M. (DE)
Zhao, W. (DE)
Dobrich, A. (DE)
Kleinschmidt, P. (DE)
Hannappel, T. (DE)Source Title 31th DGKK Workshop Epitaxy of III/V Semiconductors. - Berlin : DGKK, 2016
S. 14-14Number of pages 1 s. Publication form Print - P Action 31th DGKK Workshop Epitaxy of III/V Semiconductors Event date 08.12.2016 - 09.12.2016 VEvent location Duisburg Country DE - Germany Event type WRD Language eng - English Country DE - Germany Keywords GaP/Si ; MOVPE ; heterointerface Subject RIV BM - Solid Matter Physics ; Magnetism Institutional support FZU-D - RVO:68378271 Annotation Pseudomorphic virtual GaP/Si substrates are attractive for III/V-on-Si integration for microelectronics, photovoltaics, and water-splitting. The heterointerface is of particular interest since its atomic and electronic structure highly impacts crystal quality. Well-ordered interfaces are desirable but the formation of polar-on-nonpolar heterointerfaces is not yet fully understood. It is instructive to control each of the three steps (i) Si surface formation, (ii) III/V nucleation, and (iii) III/V layer growth individually in situ, which largely benefits from complementary surface science techniques as well as density functional theory (DFT). Here, we will highlight how such a combination enables specific metalorganic vapor phase (MOVPE) preparation of virtual substrates for both (100) and (111) orientation.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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