GaP-on-Si(100) heterointerfaces studied in situ

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SYSNO ASEP	0471302
Document Type	A - Abstract
R&D Document Type	O - Ostatní
Title	GaP-on-Si(100) heterointerfaces studied in situ
Author(s)	Supplie, O. (DE) Brückner, S. (DE) May, M.M. (DE) Kleinschmidt, P. (DE) Nägelein, A. (DE) Paszuk, A. (DE) Romanyuk, Olexandr (FZU-D)_{RID, ORCID} Grosse, F. (DE) Hannappel, T. (DE)
Source Title	International Conference on Internal Interfaces (ICII-2016). Program and Abstracts. - Marburg : Philipps Universität Marburg, 2016 S. 56
Number of pages	1 s.
Publication form	Print - P
Action	International Conference on Internal Interfaces (ICII-2016)
Event date	31.05.2016 - 03.06.2016
VEvent location	Marburg
Country	DE - Germany
Event type	WRD
Language	eng - English
Country	DE - Germany
Keywords	GaP/Si ; MOVPE ; heterointerface
Subject RIV	BM - Solid Matter Physics ; Magnetism
Institutional support	FZU-D - RVO:68378271
Annotation	We give an overview on how we combine optical in situ RAS during industrially scalable growth processes by MOVPE with electron-based in vacuo surface science analytics in order to study the GaP/Si(001) heterointerface formation and its atomic structure.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2017

Number of the records: 1