GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE

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SYSNO ASEP	0471296
Document Type	A - Abstract
R&D Document Type	O - Ostatní
Title	GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE
Author(s)	Supplie, O. (DE) Brückner, S. (DE) May, M.M. (DE) Kleinschmidt, P. (DE) Nägelein, A. (DE) Paszuk, A. (DE) Romanyuk, Olexandr (FZU-D)_{RID, ORCID} Grosse, F. (DE) Hannappel, T. (DE)
Source Title	GCCCG-1/DKT2016. - Dresden : TU Dresden, 2016 S. 40
Number of pages	1 s.
Publication form	Print - P
Action	German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./
Event date	16.03.2016 - 18.03.2016
VEvent location	Dresden
Country	DE - Germany
Event type	EUR
Language	eng - English
Country	DE - Germany
Keywords	GaP/Si ; MOVPE ; heterointerface
Subject RIV	BM - Solid Matter Physics ; Magnetism
Institutional support	FZU-D - RVO:68378271
Annotation	It was demonstrated how time-resolved RAS measurements enable to in situ monitor the GaP nucleation on Si. The GaP sublattice can be inverted by a 'rotation' of the Si dimers prior nucleation or more Ga-rich growth conditions. The impact of As on Si surface as well as GaP nucleation on top of this surface were investigated.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2017

Number of the records: 1