Number of the records: 1
GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE
- 1.Supplie, O., Brückner, S., May, M.M., Kleinschmidt, P., Nägelein, A., Paszuk, A., Romanyuk, O., Grosse, F., Hannappel, T. GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE. In: GCCCG-1/DKT2016. Dresden: TU Dresden, 2016, s. 40.
Number of the records: 1