Number of the records: 1  

GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE

  1. 1.
    SUPPLIE, O., BRÜCKNER, S., MAY, M.M., KLEINSCHMIDT, P., NÄGELEIN, A., PASZUK, A., ROMANYUK, O., GROSSE, F., HANNAPPEL, T. GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE. In: GCCCG-1/DKT2016. Dresden: TU Dresden, 2016, s. 40.
Number of the records: 1  

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