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Progress of vaccum deposition techniques for Si:H thin films structures
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SYSNO ASEP 0471062 Document Type A - Abstract R&D Document Type O - Ostatní Title Progress of vaccum deposition techniques for Si:H thin films structures Author(s) Stuchlík, Jiří (FZU-D) RID, ORCID
Píč, Vlastimil (FZU-D)
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Purkrt, Adam (FZU-D) RID
Remeš, Zdeněk (FZU-D) RID, ORCIDSource Title Development of Materials Science in Research and Education. Book of Abstracts of the 26th Joint Seminar. - Praha : Institute of Physics of the Czech Academy of Sciences, v. v. i., 2016 / Kožíšek Z. ; Král R. ; Zemenová P. - ISBN 978-80-905962-4-5
S. 43Number of pages 1 s. Publication form Print - P Action Joint Seminar Development of Materials Science in Research and Education /26./ Event date 29.08.2016 - 02.09.2016 VEvent location Pavlov Country CZ - Czech Republic Event type EUR Language eng - English Country CZ - Czech Republic Keywords amorphous silicon ; vaccum technology Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA13-12386S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation For evaluation of new quality Si:H thin films we already used the samples deposited by two technological procedures, which allows the integration of convenient nanoparticles of different semiconductors into the Si:H structures. The first one is a combination of PECVD and Reactive Deposition Epitaxy (RDE) [1] and second one the PECVD and Reactive Laser Ablation (RLA). In both cases the current technology does not allow to deposit the whole diode structure without interruption of vacuum process. Up to now only in the case of PECVD and Vacuum Evaporation together with Plasma Treatment (VE+PT) the all in situ deposition processes where realized in special vacuum chamber. The actual results, namely the influence of integrated Mg2Si NPs on the electroluminescence and reached basic parameters - Voc, FF and Isc of diode structures measured under illumination will be introduced. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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