Microwave radiation absorption and Shubnikov-de Haas oscillations of InAs/GaSb/AlSb quantum wells

Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.; Semenikhin, P.V.; Kalinina, K.V.; Parfeniev, R.V.; Berezovets, V.A.; Pangrác, Jiří; Hospodková, Alice; Hulicius, Eduard

Number of the records: 1

Microwave radiation absorption and Shubnikov-de Haas oscillations of InAs/GaSb/AlSb quantum wells

1.

SYSNO ASEP	0464448
Document Type	A - Abstract
R&D Document Type	O - Ostatní
Title	Microwave radiation absorption and Shubnikov-de Haas oscillations of InAs/GaSb/AlSb quantum wells
Author(s)	Mikhailova, M. P. (RU) Veinger, A.I. (RU) Kochman, I.V. (RU) Semenikhin, P.V. (RU) Kalinina, K.V. (RU) Parfeniev, R.V. (RU) Berezovets, V.A. (RU) Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Source Title	International Conference on Mid-IR-Optoelectronics: Materials and Devices /13./.MIOMD XIII. - Shanghai : Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 2016 / He L. S. 82-83
Number of pages	2 s.
Publication form	Print - P
Action	International Conference on Mid-IR-Optoelectronics: Materials and Devices /13./.MIOMD XIII
Event date	18.09.2016 - 22.09.2016
VEvent location	Beijing
Country	CN - China
Event type	WRD
Language	eng - English
Country	CN - China
Keywords	MOVPE ; InAs ; GaSb ; composite quantum wells ; EPR
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA16-11769S GA ČR - Czech Science Foundation (CSF)
	GP14-21285P GA ČR - Czech Science Foundation (CSF)
	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	FZU-D - RVO:68378271
Annotation	Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells (CQWs) based on the broken-gap heterojunctions are actively studied during two last decades as promising materials for spintronic and nanoelectronic applications. CQWs were prepared by LP MOVPE on n-GaSb substrateswith various widths of InAs and GaSb QWs surrounded by AlSb barriers. Shubnikov-de Haas oscillations were measured by electron paramagnetic resonance for differently oriented magnetic field up to 14 kOe at temperatures from 2.7 K to 20 K.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2017

Number of the records: 1