- Properties of RF magnetron sputtered gallium nitride semiconductors d…
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Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

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    SYSNO0105579
    TitleProperties of RF magnetron sputtered gallium nitride semiconductors doped with erbium
    TitleVlastnosti RF magnetronově naprášených galium-nitridových polovodičů
    Author(s) Peřina, Vratislav (UJF-V) RID
    Macková, Anna (UJF-V) RID, ORCID, SAI
    Hnatowicz, Vladimír (UJF-V) RID
    Prajzler, V. (CZ)
    Machovič, V. (CZ)
    Matějka, P. (CZ)
    Schröfel, J. (CZ)
    Source Title Surface and Interface Analysis. Roč. 36, č. 8 (2004), s. 952-954. - : Wiley
    Document TypeČlánek v odborném periodiku
    Grant GA104/03/0387 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z1048901 - UJF-V
    Languageeng
    CountryGB
    Keywords Er-doped GaN * luminescence * magnetron sputtering
    Permanent Linkhttp://hdl.handle.net/11104/0012816
     
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