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Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium
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SYSNO ASEP 0105579 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium Title Vlastnosti RF magnetronově naprášených galium-nitridových polovodičů Author(s) Peřina, Vratislav (UJF-V) RID
Macková, Anna (UJF-V) RID, ORCID, SAI
Hnatowicz, Vladimír (UJF-V) RID
Prajzler, V. (CZ)
Machovič, V. (CZ)
Matějka, P. (CZ)
Schröfel, J. (CZ)Source Title Surface and Interface Analysis. - : Wiley - ISSN 0142-2421
Roč. 36, č. 8 (2004), s. 952-954Number of pages 3 s. Language eng - English Country GB - United Kingdom Keywords Er-doped GaN ; luminescence ; magnetron sputtering Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects GA104/03/0387 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z1048901 - UJF-V Annotation GaN is a wide direct band-gap (E-g similar to 3.4 eV) semiconductor which is attractive for optical devices. Trivalent erbium (Er3+) is an efficient luminescent centre with an atom-like emission at 1540 nm. Typical GaN thin films are fabricated by chemical gas-phase deposition or by epitaxy. Our GaN films were deposited by RF magnetron sputtering using gallium targets and a 3:7 nitrogen-argon mixture. The thickness of the deposited samples was typically 1-2 mum. For Er doping, pellets of metallic Er were put on top of the Ga target. The goal of erbium doping is to reach a concentration sufficient for optical activity. The composition of prepared layers was checked by nuclear analytical methods. The GaN stoichiometry, O admixture and Er dopant up to depths of 600 nm was checked by RBS using 2.4 MeV protons and 2.2 MeV alpha particles. The H impurity was checked by ERDA with 2.7 MeV alpha particles. The structure of fabricated GaN films was checked by x-ray diffraction, Raman spectroscopy, absorption spectra and photoluminescence spectra. The possibility of fabrication of GaN films containing Er is verified. The H concentration originating from residual contamination of the Ar-N-2 mixture can be reduced to some degree by annealing. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2005
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