0105579 - UJF-V 20043121 RIV GB eng J - Journal Article
Peřina, Vratislav - Macková, Anna - Hnatowicz, Vladimír - Prajzler, V. - Machovič, V. - Matějka, P. - Schröfel, J.
Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium.
[Vlastnosti RF magnetronově naprášených galium-nitridových polovodičů.]
Surface and Interface Analysis. Roč. 36, č. 8 (2004), s. 952-954. ISSN 0142-2421. E-ISSN 1096-9918
R&D Projects: GA ČR GA104/03/0387
Institutional research plan: CEZ:AV0Z1048901
Keywords : Er-doped GaN * luminescence * magnetron sputtering
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Impact factor: 1.209, year: 2004
Permanent Link: http://hdl.handle.net/11104/0012816