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Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium
- 1.Peřina, V., Macková, A., Hnatowicz, V., Prajzler, V., Machovič, V., Matějka, P., Schröfel, J. Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium. Surface and Interface Analysis. 2004, 36(8), 952-954. ISSN 0142-2421. E-ISSN 1096-9918.
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