- Properties of RF magnetron sputtered gallium nitride semiconductors d…
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Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

  1. 1.
    PEŘINA, Vratislav, MACKOVÁ, Anna, HNATOWICZ, Vladimír, PRAJZLER, V., MACHOVIČ, V., MATĚJKA, P., SCHRÖFEL, J. Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium. Surface and Interface Analysis. 2004, 36(8), 952-954. ISSN 0142-2421. E-ISSN 1096-9918.
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