Number of the records: 1
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
- 1. 0342123 - FZU-D 2011 RIV RU eng J - Journal Article
Mikhailova, M. P. - Ivanov, E.V. - Moiseev, K. D. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Šimeček, Tomislav
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface.
Semiconductors. Roč. 44, č. 1 (2010), 66-71. ISSN 1063-7826
Institutional research plan: CEZ:AV0Z10100521
Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.603, year: 2010
Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface grown by MOVPE are studied. Intense positive and negative luminescence was observed in the range of photon energies of 0.3-0.4 eV with a forward and reverse bias, respectively. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3-4 μm.
Permanent Link: http://hdl.handle.net/11104/0184942