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Optical and transport properties of ZnO thin films prepared by reactive pulsed mid-frequency sputtering combined with RF ECWR plasma
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SYSNO ASEP 0618934 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Optical and transport properties of ZnO thin films prepared by reactive pulsed mid-frequency sputtering combined with RF ECWR plasma Author(s) Remeš, Zdeněk (FZU-D) RID, ORCID
Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
Hubík, Pavel (FZU-D) RID, ORCIDNumber of authors 3 Article number 590 Source Title Nanomaterials. - : MDPI - ISSN 2079-4991
Roč. 15, č. 8 (2025)Number of pages 14 s. Language eng - English Country CH - Switzerland Keywords ZnO ; optical absorptance ; photoluminescence ; sputtering ; Hall effect Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EH22_008/0004596 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GC24-10607J GA ČR - Czech Science Foundation (CSF) Method of publishing Open access Institutional support FZU-D - RVO:68378271 DOI https://doi.org/10.3390/nano15080590 Annotation The study explores the optical and transport properties of polycrystalline ZnO thin films prepared using reactive pulsed mid-frequency sputtering with RF electron cyclotron wave resonance (ECWR) plasma. This deposition method increases the ionization degree of sputtered particles, the dissociation of reactive gas and the plasma density of pulsed reactive magnetron plasma. Optical absorption spectra reveal a sharp Urbach edge, indicating low valence band disorder. Lattice disorder and deep defect concentration are more likely to occur in samples with higher roughness. PL analysis at low temperature reveals in all samples a relatively slow (µs) red emission band related to deep bulk defects. The fast (sub-ns), surface-related blue PL band was observed in some samples. Blue PL disappeared after annealing in air at 500 C. Room temperature Hall effect measurements confirm n-type conductivity, though with relatively low mobility, suggesting defect-related scattering. Persistent photoconductivity was observed under UV illumination, indicating deep trap states affecting charge transport. These results highlight the impact of deposition and post-treatment on polycrystalline ZnO thin films, offering insights into optimizing their performance for optoelectronic applications, such as UV detectors and transparent conductive oxides. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2026 Electronic address https://hdl.handle.net/11104/0365730
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