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Dataset thin film growth of [Ni(Hvanox)2] NanoscaleAdv

  1. 1.
    Title of datasetDataset thin film growth of [Ni(Hvanox)2] NanoscaleAdv
    Author(s) Sapre, Atharva Umesh (FZU-D) ORCID
    Vlček, Jan (FZU-D) RID, ORCID
    de Prado, Esther (FZU-D) ORCID, RID
    Fekete, Ladislav (FZU-D) RID, ORCID
    Klementová, Mariana (FZU-D) RID, ORCID
    Vondráček, Martin (FZU-D) RID, ORCID
    Svora, Petr (FZU-D) ORCID
    Cuza, E. (IE)
    Morgan, G.G. (IE)
    Honolka, Jan (FZU-D) RID, ORCID
    Kühne, Irina A. (FZU-D) ORCID
    Type of datasetsDataset
    Languageangličtina
    Description of the datasetWe have investigated [Ni(Hvanox)2] (H2vanox = o-vanillinoxime), a square-planar Ni(II) complex, for the preparation of thin films using organic molecule evaporation. Low pressure experiments to prepare thin films were conducted at temperatures between 120–150 °C and thin films of increasing thicknesses [Ni(Hvanox)2] (16–336 nm) have been prepared on various substrates and been analyzed by microscopic and spectroscopic methods. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to reveal a rough surface morphology which exhibits a dense arrangement of elongated, rod and needle-like nanocrystals with random orientations. It also enabled us to follow the growth of the thin films by increasing thickness revealing the formation of a seeding layer. X-ray photoelectron spectroscopy (XPS and 3D ED), TEM and X-ray diffraction (XRD) were utilized to confirm the atomic structure and the elemental composition of the thin films.
    Funding EH22_008/0004596
    GA23-05878S
    LM2023051
    Institutional supportRVO:68378271
    Keywords thin film * coordination complex * Ni(II) * film growth * thickness dependence
    LicenseCC BY 4.0 - Attribution-International license
    Contact personKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    DOIhttps://doi.org/10.57680/asep.0618314
    Handle: https://hdl.handle.net/11104/0365175
    Record ownerInstitute of Physics
    SYSNO0618314
    Date issued24.03.2025
Number of the records: 1  

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