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Hopping nature of the Hall effect in a samarium nickelate film
- 1.0583774 - FZÚ 2025 RIV US eng J - Journal Article
Stupakov, Alexandr - Kocourek, Tomáš - Pacherová, Oliva - Suchaneck, G. - Dejneka, Alexandr - Tyunina, Marina
Hopping nature of the Hall effect in a samarium nickelate film.
Applied Physics Letters. Roč. 124, č. 10 (2024), č. článku 102103. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA ČR(CZ) GA20-21864S; GA MŠMT LM2023065
Institutional support: RVO:68378271
Keywords : rare-earth nickelate * perovskite oxide * hopping conductivity * small polaron * metal–insulator transition
OECD category: Electrical and electronic engineering
Impact factor: 3.5, year: 2023 ; AIS: 0.833, rok: 2023
Method of publishing: Open access
DOI: https://doi.org/10.1063/5.0198307
We analyzed the temperature dependencies of the DC resistivity and Hall coefficient in thin films of samarium nickelate SmNiO3. A dominating hopping conductivity was revealed in the insulating phase below 400 K, which defines an exponential drop in the Hall coefficient with temperature. The estimated dependencies of the hopping activation energy, Hall mobility, and charge carrier density suggest that small polarons are responsible for hopping. The hopping transport explains the observed sign anomaly of the Hall coefficient in rare-earth nickelates.
Permanent Link: https://hdl.handle.net/11104/0351775
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