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Growth, structure, spectroscopy, and laser operation of a “Mixed” Yb (Y,Lu).sub.3./sub.Al.sub.5./sub.O.sub.12./sub. garnet crystal
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SYSNO ASEP 0579752 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Growth, structure, spectroscopy, and laser operation of a “Mixed” Yb (Y,Lu)3Al5O12 garnet crystal Author(s) Slimi, S. (ES)
Loiko, P. (FR)
Pan, M. (CN)
Lehoux, P. (FR)
Jambunathan, Venkatesan (FZU-D)
Smrž, Martin (FZU-D) RID, ORCID
Mocek, Tomáš (FZU-D) RID, ORCID, SAI
Wang, Y. (DE)
Chen, W. (CN)
Petrov, V. (DE)
Solé, R.M. (ES)
Aguiló, M. (ES)
Díaz, F. (ES)
Camy, P. (FR)
Mateos, X. (ES)Number of authors 15 Article number 1588 Source Title Crystals. - : MDPI - ISSN 2073-4352
Roč. 13, Nov (2023)Number of pages 18 s. Language eng - English Country CH - Switzerland Keywords garnet crystals ; ytterbium ion ; crystal structure ; optical spectroscopy ; solid-state lasers Subject RIV BH - Optics, Masers, Lasers OECD category Optics (including laser optics and quantum optics) R&D Projects EF15_006/0000674 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 001122510200001 EID SCOPUS 85178130832 DOI https://doi.org/10.3390/cryst13111588 Annotation A single crystal of ytterbium-doped “mixed” yttrium–lutetium aluminum garnet with a stoichiometric composition of (Y0.601Lu0.233Yb0.166)3Al5O12 was grown by the Czochralski method and its structure, vibronic, spectroscopic, and laser properties were studied. The stimulated-emission cross-section for Yb3+ ions was maximized to 2.53 × 10−20 cm2 at 1031 nm. The emission bandwidth was ~8 nm, and the reabsorption-free luminescence lifetime of the 2F5/2 state was 1.063 ms. Pumped at 941 nm, the Yb laser generated a maximum output power of 1.04 W at 1.03 and 1.05 µm with a high slope efficiency of 76.4% and a laser threshold of 76 mW. A continuous wavelength tuning over a range of 51.6 nm (1026.4–1078.0 nm) was also achieved. Power scaling was achieved using a 969 nm diode-pumped microchip cavity. A maximum output power of ~9 W was obtained at 1.05 µm with a slope efficiency of 76% and an almost circular laser beam profile. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2024 Electronic address https://hdl.handle.net/11104/0348550
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