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Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting
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SYSNO ASEP 0577954 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting Author(s) Mirza, M. Inam (FZU-D) ORCID
Bulgakov, Alexander (FZU-D) ORCID
Sopha, H. (CZ)
Starinskiy, S.V. (RU)
Turčičová, Hana (FZU-D) RID, ORCID
Novák, Ondřej (FZU-D) RID, ORCID
Mužík, Jiří (FZU-D) ORCID
Smrž, Martin (FZU-D) RID, ORCID
Volodin, V.A. (RU)
Mocek, Tomáš (FZU-D) RID, ORCID, SAI
Macák, J. M. (CZ)
Bulgakova, Nadezhda M. (FZU-D) ORCIDNumber of authors 12 Article number 1271832 Source Title Frontiers in nanotechnology - ISSN 2673-3013
Roč. 5, Oct. (2023)Number of pages 12 s. Language eng - English Country CH - Switzerland Keywords amorphous titania nanotubes ; ultrashort laser pulses ; laser-induced crystallization ; non-thermal processes ; stress waves ; multilayer nanofilms ; selective annealing Subject RIV BH - Optics, Masers, Lasers OECD category Optics (including laser optics and quantum optics) R&D Projects EF15_003/0000445 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EF15_006/0000674 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 001091760100001 EID SCOPUS 85175694432 DOI 10.3389/fnano.2023.1271832 Annotation As-prepared nanostructured semiconductor materials are usually found in an amorphous form,which needs to be converted into a crystalline one for improving electronic properties and achieving enhanced application functionalities.The most utilized method is thermal annealing in a furnace,which however is time- and energy-consuming and not applicable for low-temperature melting substrates.An alternative is laser annealing,which can be carried out in a relatively short time and,additionally,offers the possibility of annealing localized areas.However,laser-annealed nanostructures are often distorted by melting,while preserving the as-prepared morphology is essential for practical applications.We analyze conditions of non-thermal ultrafast laser annealing of two kinds of nanostructures:anodic TiO2 nanotube layers and Ge/Si multilayer stacks.For both cases,regimes of crystallization have been found,which yield in preserving the initial nanomaterial morphologies without any melting signs.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2024 Electronic address https://hdl.handle.net/11104/0347032
Number of the records: 1