Number of the records: 1  

Picosecond pulsed laser deposition of MoS.sub.2./sub. thin films

  1. 1.
    SYSNO ASEP0573259
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitlePicosecond pulsed laser deposition of MoS2 thin films
    Author(s) Quiñones-Galvan, J.G. (MX)
    Mirza, M. Inam (FZU-D) ORCID
    Hrabovský, Jan (FZU-D) ORCID
    Campos-Gonzalez, E. (MX)
    de Moure-Flores, F. (MX)
    Santos-Cruz, J. (MX)
    Santana-Aranda, M.A. (MX)
    Bulgakov, Alexander (FZU-D) ORCID
    Bulgakova, Nadezhda M. (FZU-D) ORCID
    Number of authors9
    Source TitleMM Science Journal. - : MM publishing - ISSN 1803-1269
    Roč. 2023, June (2023), s. 6421-6425
    Number of pages5 s.
    Languageeng - English
    CountryCZ - Czech Republic
    Keywords2D materials ; picosecond laser ablation ; thin films ; MoS2 ; PLD ; time-of-flight distributions
    Subject RIVBH - Optics, Masers, Lasers
    OECD categoryOptics (including laser optics and quantum optics)
    R&D ProjectsEF15_003/0000445 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportFZU-D - RVO:68378271
    UT WOS001006578100001
    EID SCOPUS85161643435
    DOI10.17973/MMSJ.2023_06_2023003
    AnnotationMoS2 thin films were grown by the pulsed laser deposition technique using a picosecond laser at a wavelength of 1030 nm. The plasma ion mean kinetic energy and density were estimated from the time-of-flight distributions measured using a Langmuir planar probe. It has been found that the mean kinetic energy decreases with increasing the laser pulse energy. This unusual effect is explained by the difference in the volatility of the vaporized species. Samples were structurally characterized by Raman spectroscopy and grazing angle X-ray diffraction. It was found that thin films of amorphous matrices containing MoS2 nanocrystallites were grown. Optical characterization carried out by UV-vis spectroscopy yielded transmittance values above 90% in the visible spectral range and an indirect electronic transition at 1.4 eV.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2024
    Electronic addresshttps://hdl.handle.net/11104/0343729
Number of the records: 1  

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