- Effect of irradiation and annealing performed with bias voltage appli…
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Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors

  1. 1.
    SYSNO0570817
    TitleEffect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors
    Author(s) Kroll, Jiří (FZU-D) ORCID
    Allport, P. P. (GB)
    Chisholm, A. (GB)
    Dudáš, D. (CZ)
    Fadeyev, V. (US)
    George, W. (GB)
    Gonella, L. (GB)
    Kopsalis, I. (GB)
    Kvasnička, Jiří (FZU-D) RID, ORCID
    Latoňová, Věra (FZU-D) ORCID
    Lomas, J. (GB)
    Martinez-Mckinney, F. (US)
    Mikeštíková, Marcela (FZU-D) RID, ORCID
    Shi, X. (CN)
    Tůma, Pavel (FZU-D)
    Ullan, M. (ES)
    Unno, Y. (JP)
    Corespondence/seniorKroll, Jiří - Korespondující autor
    Source Title Nuclear Instruments & Methods in Physics Research Section A. Roč. 1047, Feb (2023). - : Elsevier
    Article number167726
    Document TypeČlánek v odborném periodiku
    Grant LTT17018 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
    LM2018104 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
    Institutional supportFZU-D - RVO:68378271
    Languageeng
    CountryNL
    Keywords ATLAS inner tracker * silicon strip sensors * gamma irradiation * annealing
    URLhttps://doi.org/10.1016/j.nima.2022.167726
    Permanent Linkhttps://hdl.handle.net/11104/0342156
     
Number of the records: 1  

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