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Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors
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SYSNO ASEP 0570817 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve SCOPUS Title Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors Author(s) Kroll, Jiří (FZU-D) ORCID
Allport, P. P. (GB)
Chisholm, A. (GB)
Dudáš, D. (CZ)
Fadeyev, V. (US)
George, W. (GB)
Gonella, L. (GB)
Kopsalis, I. (GB)
Kvasnička, Jiří (FZU-D) RID, ORCID
Latoňová, Věra (FZU-D) ORCID
Lomas, J. (GB)
Martinez-Mckinney, F. (US)
Mikeštíková, Marcela (FZU-D) RID, ORCID
Shi, X. (CN)
Tůma, Pavel (FZU-D)
Ullan, M. (ES)
Unno, Y. (JP)Number of authors 17 Article number 167726 Source Title Nuclear Instruments & Methods in Physics Research Section A. - : Elsevier - ISSN 0168-9002
Roč. 1047, Feb (2023)Number of pages 3 s. Language eng - English Country NL - Netherlands Keywords ATLAS inner tracker ; silicon strip sensors ; gamma irradiation ; annealing Subject RIV BF - Elementary Particles and High Energy Physics OECD category Particles and field physics R&D Projects LTT17018 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2018104 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 EID SCOPUS 85142852078 DOI https://doi.org/10.1016/j.nima.2022.167726 Annotation The powering configuration of the silicon strip modules developed for the new Inner Tracker of the ATLAS experiment includes a voltage of up to 0.5 V across the coupling capacitor of each individual strip. However, this voltage is usually not applied in the sensor irradiation studies due to the significant technical and logistical complications. To study the effect of an irradiation and a subsequent beneficial annealing on the strip sensors in real experimental conditions, four prototype ATLAS17LS miniature sensors were irradiated by 60Co source and annealed, both with and without the bias voltage of 0.5 V applied across the coupling capacitors. The values of interstrip resistance measured on irradiated samples before and after annealing indicate that increase of radiation damage caused by the applied voltage can be compensated by the presence of this voltage during annealing. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2024 Electronic address https://doi.org/10.1016/j.nima.2022.167726
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