- Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanot…
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Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots

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    SYSNO ASEP0570629
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleNon-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
    Author(s) Schock, R. T. K. (DE)
    Neuwald, J. (DE)
    Moeckel, W. (DE)
    Kronseder, M. (DE)
    Pirker, Luka (UFCH-W) ORCID, RID
    Remškar, M. (SI)
    Huettel, A. K. K. (DE)
    Article number2209333
    Source TitleAdvanced Materials. - : Wiley - ISSN 0935-9648
    Roč. 35, č. 13 (2023)
    Number of pages7 s.
    Languageeng - English
    CountryDE - Germany
    Keywordsbismuth ; nanotubes ; molybdenum disulfide ; quantum confinement ; quantum dots
    Subject RIVCF - Physical ; Theoretical Chemistry
    OECD categoryPhysical chemistry
    Method of publishingOpen access
    Institutional supportUFCH-W - RVO:61388955
    UT WOS000935944100001
    EID SCOPUS85148573479
    DOI https://doi.org/10.1002/adma.202209333
    AnnotationMolybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100 k omega are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices that use low-work-function metals as contacts. Single-level quantum transport is observed at temperatures below 100 mK.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2024
    Electronic addresshttps://hdl.handle.net/11104/0341936
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