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Structure modulation for bandgap engineered vacancy-ordered Cs3Bi2Br9 perovskite structures through copper alloying

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    SYSNO ASEP0561506
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleStructure modulation for bandgap engineered vacancy-ordered Cs3Bi2Br9 perovskite structures through copper alloying
    Author(s) Elattar, A. (JP)
    Kobera, Libor (UMCH-V) RID, ORCID
    Kangsabanik, J. (DK)
    Suzuki, H. (JP)
    Abbrent, Sabina (UMCH-V) RID, ORCID
    Nishikawa, T. (JP)
    Thygesen, K. S. (DK)
    Brus, Jiří (UMCH-V) RID, ORCID
    Hayashi, Y. (JP)
    Source TitleJournal of Materials Chemistry C. - : Royal Society of Chemistry - ISSN 2050-7526
    Roč. 10, č. 35 (2022), s. 12863-12872
    Number of pages10 s.
    Languageeng - English
    CountryGB - United Kingdom
    KeywordsCs3Bi2Br9 perovskite ; Cs2CuBr4 ; light absorption
    Subject RIVCB - Analytical Chemistry, Separation
    OECD categoryAnalytical chemistry
    R&D ProjectsGA19-05259S GA ČR - Czech Science Foundation (CSF)
    Method of publishingLimited access
    Institutional supportUMCH-V - RVO:61389013
    UT WOS000843038100001
    EID SCOPUS85137400745
    DOI https://doi.org/10.1039/D2TC01762H
    AnnotationLead-free, vacancy-ordered, Cs3Bi2Br9 perovskite is considered promising inorganic, stable, and non-toxic halide perovskite for optoelectronic and photovoltaic applications. However, its wide bandgap limits its state-of-art applications. We notice an observable enhancement of light absorption of Cs3Bi2Br9 perovskite crystals upon CuBr2 addition to the perovskite precursor. X-ray diffraction, 133Cs solid state NMR, Raman spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations were studied to find out the nature of the perovskite crystal formation mechanism. With the addition of up to 50% CuBr2, the Cs3Bi2Br9 perovskite retains its matrix structure with homogeneously distributed Cs2CuBr4 large domains. Drop-casting of perovskite/DMSO solutions over TiO2 thin films reveals a reduction of the direct bandgap from 2.56 eV for pristine Cs3Bi2Br9 to 1.77 eV for a 50% Cu2+ alloyed one. First-principles calculations reveal the possibility of Cs2CuBr4 phase formation with higher Cu alloying, which can be the main reason behind bandgap narrowing. For homogeneously Cu alloyed Cs3Bi2Br9, reduction of the effective bandgap can occur due to the formation of compensating defect levels (VBr, CuBr) above the pristine valence band maxima (VBM). These results highlight the importance of alloying for structure modulation for bandgap engineered vacancy-ordered perovskite structures.
    WorkplaceInstitute of Macromolecular Chemistry
    ContactEva Čechová, cechova@imc.cas.cz ; Tel.: 296 809 358
    Year of Publishing2023
    Electronic addresshttps://pubs.rsc.org/en/content/articlelanding/2022/TC/D2TC01762H
Number of the records: 1  

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