Number of the records: 1
Z.sub.3./sub. charge density wave of silicon atomic chains on a vicinal silicon surface
- 1.
SYSNO ASEP 0558816 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Z3 charge density wave of silicon atomic chains on a vicinal silicon surface Author(s) Do, E. (KR)
Park, J.-W. (KR)
Stetsovych, Oleksandr (FZU-D) ORCID
Jelínek, Pavel (FZU-D) RID, ORCID
Yeom, H.W. (KR)Number of authors 5 Source Title ACS Nano. - : American Chemical Society - ISSN 1936-0851
Roč. 16, č. 4 (2022), s. 6598-6604Number of pages 7 s. Language eng - English Country US - United States Keywords nc-AFM ; DFT ; 1D chains ; CDW Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GX20-13692X GA ČR - Czech Science Foundation (CSF) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000813109400001 EID SCOPUS 85128623375 DOI 10.1021/acsnano.2c00972 Annotation An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces, but the nature of its low-temperature phases has been puzzling for last two decades. Here, we unambiguously identify the low-temperature structural distortion of this surface using high-resolution atomic force microscopy and scanning tunneling microscopy. The most important structural ingredient of this surface, the step-edge Si chains, are found to be strongly buckled, every third atom down, forming trimer unit cells. This observation is consistent with the recent model of rehybridized dangling bonds and rules out the antiferromagnetic spin ordering proposed earlier. The spectroscopy and electronic structure calculation indicate a charge density wave insulator with a Z3 topology, making it possible to exploit topological phases and excitations. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023 Electronic address https://hdl.handle.net/11104/0333948
Number of the records: 1