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Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar.sup.+./sup. ion beam
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SYSNO ASEP 0556898 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam Author(s) Vacík, Jiří (UJF-V) RID, ORCID, SAI
Cannavó, Antonino (UJF-V) ORCID, SAI
Bakardjieva, Snejana (UACH-T) SAI, RID, ORCID
Kupčík, Jaroslav (UACH-T) SAI, RID, ORCID
Lavrentev, Vasyl (UJF-V) RID, ORCID, SAI
Ceccio, Giovanni (UJF-V) ORCID, RID, SAI
Horák, Pavel (UJF-V) RID, ORCID
Němeček, J. (CZ)
Verna, A. (IT)
Parmeggiani, M. (IT)
Calcagno, L. (IT)
Klie, R. (US)
Duchon, J. (CZ)Number of authors 13 Source Title Radiation Effects and Defects in Solids. - : Taylor & Francis - ISSN 1042-0150
Roč. 177, 1-2 (2022), s. 137-160Number of pages 24 s. Publication form Print - P Language eng - English Country GB - United Kingdom Keywords ion beam synthesis ; Hf-In-C nanocomposite ; Hf2InC MAX phase ; HfC0 ; (95) phase ; radiation tolerance OECD category Nuclear related engineering R&D Projects EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA18-21677S GA ČR - Czech Science Foundation (CSF) Research Infrastructure CANAM II - 90056 - Ústav jaderné fyziky AV ČR, v. v. i.
CzechNanoLab - 90110 - Vysoké učení technické v BrněMethod of publishing Limited access Institutional support UJF-V - RVO:61389005 ; UACH-T - RVO:61388980 UT WOS 000770467000001 EID SCOPUS 85126828743 DOI https://doi.org/10.1080/10420150.2022.2049788 Annotation Thin films consisting of 17 groups of Hf/In/C multilayers cyclically alternating layers of Hf, In and C each with a thickness of 4-5 nm were synthesized by ion sputtering using a 25 keV Ar+ ion beam with 400 mu A current and targets made of pure hafnium, indium and carbon. The films were subsequently annealed in vacuum at 120 degrees C for 24 hours to induce intermixing of elements phases, their interaction, and formation of the Hf-In-C nanostructures (including the Hf2InC MAX phase). After fabrication, a part of the pristine (as deposited) samples was irradiated by 200 keV Ar+ ions at high fluences 10(15) and 10(17) cm(-2). Both samples (as prepared and irradiated) were analyzed by IBA nuclear analytical methods, as well as by AFM and TEM microscopic techniques, and by XPS and profilometry to understand the microstructural evolution. Moreover, nanoindentation analysis was performed to assess the effects of ion irradiation on the microstructure and mechanical properties of the films. The experimental results showed that thin Hf-In-C nanostructured films can be formed by ion sputtering with promising mechanical parameters. The irradiated Hf-In-C films were found to be resistant only up to a fluence of about 10(15) Ar cm(-2). At higher fluences it degrades, and Hf2InC transforms to the binary HfC0.95 phase due to sublimation of In. At 10(17) cm(-2) the original matrix (including M(2)AX) is destroyed, and instead, a mixture of MX binary phases (e.g. HfC0.95) and crystalline oxides (e.g. HfO2 and In2O3) are formed. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2023 Electronic address https://doi.org/10.1080/10420150.2022.2049788
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