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V-pits formation in InGaN/GaN: influence of threading dislocations and indium content
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SYSNO 0556260 Title V-pits formation in InGaN/GaN: influence of threading dislocations and indium content Author(s) Stránská Matějová, J. (CZ)
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Košutová, T. (CZ)
Hubáček, Tomáš (FZU-D) ORCID
Hývl, Matěj (FZU-D) ORCID
Holý, V. (CZ)Source Title Journal of Physics D-Applied Physics. Roč. 55, č. 25 (2022). - : Institute of Physics Publishing Article number 255101 Document Type Článek v odborném periodiku Grant LTAIN19163 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic CZ.02.1.01/0.0/0.0/16_026/0008382 EF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Language eng Country GB Keywords V-pits * InGaN/GaN * dislocations * x-ray diffraction * diffuse scattering * XRD * RSM URL https://doi.org/10.1088/1361-6463/ac5c1a Permanent Link http://hdl.handle.net/11104/0330551 File Download Size Commentary Version Access 0556260.pdf 5 11.9 MB Author’s postprint open-access
Number of the records: 1