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V-pits formation in InGaN/GaN: influence of threading dislocations and indium content
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SYSNO ASEP 0556260 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title V-pits formation in InGaN/GaN: influence of threading dislocations and indium content Author(s) Stránská Matějová, J. (CZ)
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Košutová, T. (CZ)
Hubáček, Tomáš (FZU-D) ORCID
Hývl, Matěj (FZU-D) ORCID
Holý, V. (CZ)Number of authors 6 Article number 255101 Source Title Journal of Physics D-Applied Physics. - : Institute of Physics Publishing - ISSN 0022-3727
Roč. 55, č. 25 (2022)Number of pages 15 s. Language eng - English Country GB - United Kingdom Keywords V-pits ; InGaN/GaN ; dislocations ; x-ray diffraction ; diffuse scattering ; XRD ; RSM Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LTAIN19163 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Research Infrastructure CzechNanoLab - 90110 - Vysoké učení technické v Brně Method of publishing Open access with time embargo (28.03.2023) Institutional support FZU-D - RVO:68378271 UT WOS 000778222800001 EID SCOPUS 85128130915 DOI https://doi.org/10.1088/1361-6463/ac5c1a Annotation Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis of atomic force microscope images in order to determine the impact of In concentration and threading dislocations (TDs) density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023 Electronic address https://doi.org/10.1088/1361-6463/ac5c1a
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