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Synthesis of Cu-Ti thin film multilayers on silicon substrates
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SYSNO ASEP 0541428 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Synthesis of Cu-Ti thin film multilayers on silicon substrates Author(s) Torrisi, Alfio (UJF-V) RID, ORCID
Horák, Pavel (UJF-V) RID, ORCID
Vacík, Jiří (UJF-V) RID, ORCID, SAI
Lavrentiev, Vasyl (UJF-V) RID, ORCID, SAI
Cannavó, Antonino (UJF-V) ORCID, SAI
Ceccio, Giovanni (UJF-V) ORCID, RID, SAI
Vaniš, Jan (URE-Y) RID
Yatskiv, Roman (URE-Y) RID, ORCID
Grym, Jan (URE-Y)Number of authors 9 Article number 50 Source Title Bulletin of Materials Science. - : Indian Academy of Sciences - ISSN 0250-4707
Roč. 44, č. 1 (2021)Number of pages 8 s. Publication form Print - P Language eng - English Country IN - India Keywords chemiresistors ; intermixing layers ; thermal annealing ; SIMS analysis ; Cu-Ti Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Materials engineering Subject RIV - cooperation Institute of Radio Engineering and Electronics - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GA19-02804S GA ČR - Czech Science Foundation (CSF) Research Infrastructure CANAM II - 90056 - Ústav jaderné fyziky AV ČR, v. v. i. Method of publishing Limited access Institutional support URE-Y - RVO:67985882 ; UJF-V - RVO:61389005 UT WOS 000621448300001 EID SCOPUS 85101679529 DOI 10.1007/s12034-020-02346-6 Annotation Metal-oxide-based sensors (MOS) can be used for several technological applications in microelectronics, due to their low cost and sensitive capabilities to different chemical species. On the perspective to develop CuO-TiO2 MOS, our goal was to obtain a homogeneous intermixing of Cu and Ti in the bulk structure of the detectors, exploring the most promising combination between such elements and avoiding the presence of Cu-Ti-O compounds. To do that, several Cu and Ti thin layers were alternatively deposited by Ar+ sputtering on silicon wafers and, subsequently, oxidized by thermal annealing. The obtained samples were characterized in terms of %at. Cu-Ti ratios (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations), showing the abundance ratios of such elements in the whole structure. In particular, SIMS maps allowed to study the spatial distribution and thickness of each phase of the Cu-Ti multilayers and further to observe the Cu diffusion and the mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. This unwanted effect represents an open issue that has to be investigated, in order to improve the MOS fabrication. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2022 Electronic address https://doi.org/10.1007/s12034-020-02346-6
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