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SIMS studies of MOVPE GaN/InGaN scintilator nano-structures
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SYSNO ASEP 0539244 Document Type A - Abstract R&D Document Type O - Ostatní Title SIMS studies of MOVPE GaN/InGaN scintilator nano-structures Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Dominec, Filip (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Bábor, P. (CZ)Number of authors 5 Source Title Proceedings of Abstracts - Nanocon 2019. - Ostrava : Tanger Ltd., 2019 / Shrbená-Váňová J. - ISBN 978-80-87294-94-9
S. 81-81Number of pages 1 s. Publication form Online - E Action Nanocon 2019 International Conference on Nanomaterials - Research & Application /11./ Event date 16.10.2019 - 18.10.2019 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords SIMS ; InGaN/GaN heterostructure ; scintillators ; MOVPE Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA16-11769S GA ČR - Czech Science Foundation (CSF) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation Secondary ion mass spectrometry (SIMS) analysis is a powerful tool for determination material composition and impurity concentration at different parts of structure with a several nm resolution and down to 10E16 cm-3 for many elements. We can estimate the thickness of nanostructure layer and exactly measure their periodicity. Optimization of the SIMS technique can improve our results. Measuring the impurity concentration profiles close to surface, we can estimate surface roughness, in our case the V-pits depth. We can measure impurity concentration profiles with high accuracy. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021
Number of the records: 1