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Towards quantitative interpretation of Fourier-transform photocurrent spectroscopy on thin-film solar cells
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SYSNO ASEP 0538302 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Towards quantitative interpretation of Fourier-transform photocurrent spectroscopy on thin-film solar cells Author(s) Holovský, Jakub (FZU-D) RID, ORCID
Stuckelberger, M. (DE)
Finsterle, T. (CZ)
Conrad, B. (CZ)
Amalathas, A.P. (CZ)
Müller, Martin (FZU-D) RID, ORCID
Haug, F.J. (CH)Number of authors 7 Article number 820 Source Title Coatings. - : MDPI
Roč. 10, č. 9 (2020), s. 1-9Number of pages 9 s. Language eng - English Country CH - Switzerland Keywords solar cells ; photocurrent spectroscopy ; defect density ; amorphous silicon ; open-circuit voltage ; radiative limit Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA18-24268S GA ČR - Czech Science Foundation (CSF) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000581477200001 EID SCOPUS 85090788399 DOI 10.3390/coatings10090820 Annotation The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy is reviewed. As new materials appear, a prediction of potentially achievable open-circuit voltage is highly desirable. From thermodynamics, a prediction can be made based on the radiative limit, neglecting non-radiative recombination and carrier transport effects. Beyond this, more accurate analysis has to be done. We analyzed a series of hydrogenated amorphous silicon solar cells of different thicknesses at different states of light soaking. Combining empirical results with optical, electrical and thermodynamic simulations, we provide a predictive model of the open-circuit voltage for a given defect density and absorber thickness. We observed that, rather than defect density or thickness, it is the total number of defects, that matters. Alternatively, including defect absorption into the thermodynamic radiative limit gives also useful upper bound to the open-circuit voltage. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address http://hdl.handle.net/11104/0316124
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