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Towards quantitative interpretation of Fourier-transform photocurrent spectroscopy on thin-film solar cells

  1. 1.
    SYSNO ASEP0538302
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleTowards quantitative interpretation of Fourier-transform photocurrent spectroscopy on thin-film solar cells
    Author(s) Holovský, Jakub (FZU-D) RID, ORCID
    Stuckelberger, M. (DE)
    Finsterle, T. (CZ)
    Conrad, B. (CZ)
    Amalathas, A.P. (CZ)
    Müller, Martin (FZU-D) RID, ORCID
    Haug, F.J. (CH)
    Number of authors7
    Article number820
    Source TitleCoatings. - : MDPI
    Roč. 10, č. 9 (2020), s. 1-9
    Number of pages9 s.
    Languageeng - English
    CountryCH - Switzerland
    Keywordssolar cells ; photocurrent spectroscopy ; defect density ; amorphous silicon ; open-circuit voltage ; radiative limit
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsEF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GA18-24268S GA ČR - Czech Science Foundation (CSF)
    Method of publishingOpen access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000581477200001
    EID SCOPUS85090788399
    DOI10.3390/coatings10090820
    AnnotationThe method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy is reviewed. As new materials appear, a prediction of potentially achievable open-circuit voltage is highly desirable. From thermodynamics, a prediction can be made based on the radiative limit, neglecting non-radiative recombination and carrier transport effects. Beyond this, more accurate analysis has to be done. We analyzed a series of hydrogenated amorphous silicon solar cells of different thicknesses at different states of light soaking. Combining empirical results with optical, electrical and thermodynamic simulations, we provide a predictive model of the open-circuit voltage for a given defect density and absorber thickness. We observed that, rather than defect density or thickness, it is the total number of defects, that matters. Alternatively, including defect absorption into the thermodynamic radiative limit gives also useful upper bound to the open-circuit voltage.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2021
    Electronic addresshttp://hdl.handle.net/11104/0316124
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