Amorphous/crystalline silicon interface stability: correlation between infrared spectroscopy and electronic passivation properties

0536301 - FZÚ 2021 RIV DE eng J - Journal Article
Holovský, Jakub - De Nicolás, S.M. - De Wolf, S. - Ballif, C.
Amorphous/crystalline silicon interface stability: correlation between infrared spectroscopy and electronic passivation properties.
Advanced Materials Interfaces. Roč. 7, č. 20 (2020), s. 1-7, č. článku 2000957. ISSN 2196-7350. E-ISSN 2196-7350
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA18-24268S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : amorphous silicon * silicon heterojunction * solar cells * passivation * FTIR
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 6.147, year: 2020
Method of publishing: Limited access
https://doi.org/10.1002/admi.202000957

Ultrathin layers of hydrogenated amorphous silicon (a‐Si:H), passivating the surface of crystalline silicon (c‐Si), are key enablers for high‐efficiency silicon heterojunction solar cells. In this work, the authors apply highly sensitive attenuated total reflectance Fourier‐transform infrared spectroscopy, combined with carrier‐lifetime measurements and carrier‐lifetime imaging. To gain insight, the a‐Si:H/c‐Si interfacial morphology is intentionally manipulated by applying different surface, annealing and ageing treatments. Changes are observed in the vibrational modes of hydrides (SiHX), oxides (SiHX(SiYOZ)) together with hydroxyl and hydrocarbon surface groups. The effect of unintentional oxidation and contamination is considered as well. Electronic interfacial properties are reviewed and discussed from the point of hydrogen mono‐layer passivation of the c‐Si surface and from the perspectives of a‐Si:H bulk properties.
Permanent Link: http://hdl.handle.net/11104/0314095