0535332 - FZÚ 2021 RIV CH eng J - Journal Article
Šebesta, J. - Carva, K. - Kriegner, Dominik - Honolka, Jan
Twin domain structure in magnetically doped Bi₂Se₃ topological insulator.
Nanomaterials. Roč. 10, č. 10 (2020), s. 1-18, č. článku 2059. E-ISSN 2079-4991
R&D Projects: GA ČR GA19-13659S
Institutional support: RVO:68378271
Keywords : topological insulators * magnetic doping * defects * ab initio
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 5.076, year: 2020
Method of publishing: Open access

Twin domains are naturally present in the topological insulator Bi2Se3 and strongly affect its properties. While studies of their behavior in an otherwise ideal Bi2Se3 structure exist, little is known about their possible interaction with other defects. Extra information is needed, especially for the case of an artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot of attention recently. Employing ab initio calculations based on a layered Green’s function formalism, we study the interaction between twin planes in Bi2Se3. We show the influence of various magnetic and nonmagnetic chemical defects on the twin plane formation energy and discuss the related modification of their distribution.

Permanent Link: http://hdl.handle.net/11104/0313386