Number of the records: 1
Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor
- 1.Haider, Golam - Wang, Y. H. - Farjana, Jaishmin Sonia - Chiang, Ch.-W. - Frank, Otakar - Vejpravová, J. - Kalbáč, Martin - Chen, Y.-F.
Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor.
Advanced Optical Materials. Roč. 8, č. 19 (2020), č. článku 2000859. ISSN 2195-1071. E-ISSN 2195-1071
OECD category: Physical chemistry
Impact factor: 9.926, year: 2020
Method of publishing: Limited access
http://hdl.handle.net/11104/0311556
Number of the records: 1