Number of the records: 1
Transferless Inverted graphene/silicon heterostructures prepared by plasma-enhanced chemical vapor deposition of amorphous silicon on CVD graphene
- 1.
SYSNO ASEP 0531897 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Transferless Inverted graphene/silicon heterostructures prepared by plasma-enhanced chemical vapor deposition of amorphous silicon on CVD graphene Author(s) Müller, Martin (FZU-D) RID, ORCID
Bouša, Milan (UFCH-W) RID, ORCID
Hájková, Zdeňka (FZU-D) RID, ORCID
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Drogowska-Horna, Karolina A. (UFCH-W)
Kalbáč, Martin (UFCH-W) RID, ORCID
Frank, Otakar (UFCH-W) RID, ORCIDNumber of authors 8 Article number 589 Source Title Nanomaterials. - : MDPI
Roč. 10, č. 3 (2020), s. 1-10Number of pages 10 s. Language eng - English Country CH - Switzerland Keywords silicon ; graphene ; heterostructure ; CDV Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Subject RIV - cooperation J. Heyrovsky Institute of Physical Chemistry - Physical ; Theoretical Chemistry R&D Projects EF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA17-18702S GA ČR - Czech Science Foundation (CSF) EF16_013/0001821 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support FZU-D - RVO:68378271 ; UFCH-W - RVO:61388955 UT WOS 000526090400189 EID SCOPUS 85082713590 DOI 10.3390/nano10030589 Annotation The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult-as is the case of graphene on noncatalytic substrates such as Si-inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 degrees C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address http://hdl.handle.net/11104/0310529
Number of the records: 1