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Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation.
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SYSNO ASEP 0524022 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation. Author(s) Koštejn, Martin (UCHP-M) RID, SAI, ORCID
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Dřínek, Vladislav (UCHP-M) RID, ORCID, SAI
Jandová, Věra (UCHP-M) RID, ORCID, SAI
Kupčík, Jaroslav (UCHP-M) RID, ORCID, SAI
Huber, S. (CZ)
Mikysek, Petr (GLU-S) SAI, ORCIDArticle number 123105 Source Title Materials Chemistry and Physics. - : Elsevier - ISSN 0254-0584
Roč. 251, SEP 1 (2020)Number of pages 8 s. Language eng - English Country CH - Switzerland Keywords ferromagnetic material ; thin layer ; crystalline nanoparticles Subject RIV CF - Physical ; Theoretical Chemistry OECD category Physical chemistry Subject RIV - cooperation Institute of Geology - Solid Matter Physics ; Magnetism Method of publishing Open access with time embargo (01.09.2022) Institutional support UCHP-M - RVO:67985858 ; GLU-S - RVO:67985831 UT WOS 000549319900043 EID SCOPUS 85083815527 DOI https://doi.org/10.1016/j.matchemphys.2020.123105 Annotation Pulsed laser deposition and post-annealing was used for the preparation of MnSix and MnGex thin layers in order to study the increase of ferromagnetic properties related to crystalline phases. As-prepared samples were mainly amorphous with Mn concentration ranging from 20 to 50 at.%. Annealing of MnSix and MnGex layers at 600 °C and 350 °C, respectively, led to the formation of crystalline nanoparticles with the diameter from 10 to 20 nm. Magnetization measured at 300 K showed that the annealed MnSix layers exhibited magnetization of 0.07 μB/Mn atom. Magnetization of annealed MnGex layers varied depending on Mn concentration from 0.1 μ B/Mn atom (30 at.%) to 0.4 μ B/Mn atom (47 at.%). Resistivity measurements of the annealed layers showed values typical for highly degenerate silicon (~10-3.Ω.m) and germanium (~10-5.Ω.m). Temperature dependence of resistivity revealed that, after annealing, only MnSix layers with lower Mn concentration preserved a semiconducting behaviour. Workplace Institute of Chemical Process Fundamentals Contact Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227 Year of Publishing 2021 Electronic address http://hdl.handle.net/11104/0308907
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