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Gate voltage impact on charge mobility in end-on stacked conjugated oligomers
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SYSNO ASEP 0523816 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Gate voltage impact on charge mobility in end-on stacked conjugated oligomers Author(s) Sun, S.-J. (CN)
Menšík, Miroslav (UMCH-V) RID
Toman, Petr (UMCH-V) RID, ORCID
Chung, C.-H. (CN)
Ganzorig, C. (MN)
Pfleger, Jiří (UMCH-V) RID, ORCIDSource Title Physical Chemistry Chemical Physics. - : Royal Society of Chemistry - ISSN 1463-9076
Roč. 22, č. 15 (2020), s. 8096-8108Number of pages 13 s. Language eng - English Country GB - United Kingdom Keywords organic FET transistors ; conductive polymers ; organic electronics Subject RIV CD - Macromolecular Chemistry OECD category Polymer science R&D Projects GA17-03984S GA ČR - Czech Science Foundation (CSF) TE01020022 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) LO1507 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support UMCH-V - RVO:61389013 UT WOS 000529178800039 EID SCOPUS 85083546368 DOI https://doi.org/10.1039/C9CP06477J Annotation We present a model of the charge transport in thin film organic field-effect transistors with the active channel made of linear conjugated chains stacked on the substrate with end-on-orientation. The transport was simulated in a box consisting of 25 polymer chains, in which the delocalized quantum orbital eigenstates of the on-chain hole distribution were calculated. The inter-chain charge transfer was solved semi-classically. The full self-consistent distribution of charge density and electric field was determined for various applied gate and source–drain voltages. We found that the dependence of charge mobility on gate voltage is not monotonic: it first increases with increasing gate voltage for a limited interval of the latter, otherwise it decreases with the gate voltage. Next, we found formation of the second resonant peak for higher gate voltages. The mobility dependence on the gate voltage confirmed that the current flowing through the active semiconductor layer should be described not only as the hole transfer between adjacent repeat units of the neighbouring chains, but also as the transfer of coherences among on-chain repeat units. The presented model can also give a new insight into the charge transport in organic field-effect transistors with a novel vertical architecture. Workplace Institute of Macromolecular Chemistry Contact Eva Čechová, cechova@imc.cas.cz ; Tel.: 296 809 358 Year of Publishing 2021 Electronic address https://pubs.rsc.org/en/content/articlelanding/2020/CP/C9CP06477J#!divAbstract
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