Recrystallization as the governing mechanism of ion track formation

0521106 - FZÚ 2020 RIV GB eng J - Journal Article
Rymzhanov, R.A. - Medvedev, Nikita - O'Connell, J. H. - van Vuuren, A. J. - Skuratov, V.A. - Volkov, A.E.
Recrystallization as the governing mechanism of ion track formation.
Scientific Reports. Roč. 9, č. 1 (2019), s. 1-9, č. článku 3837. ISSN 2045-2322. E-ISSN 2045-2322
R&D Projects: GA MŠMT LTT17015
EU Projects: European Commission(XE) 654148 - LASERLAB-EUROPE
Institutional support: RVO:68378271
Keywords : irradiation of dielectric crystals with 167 MeV Xe ions * response mechanism * simulation and TEM data on MgO * Al₂O₃ * YAG crystals
OECD category: Optics (including laser optics and quantum optics)
Impact factor: 3.998, year: 2019
Method of publishing: Open access

Response of dielectric crystals: MgO, Al2O3 and Y3Al5O12 (YAG) to irradiation with 167 MeV Xe ions decelerating in the electronic stopping regime is studied. Comprehensive simulations demonstrated that despite similar ion energy losses and the initial excitation kinetics of the electronic systems and lattices, significant differences occur among final structures of ion tracks in these materials, supported by experiments. No ion tracks appeared in MgO, whereas discontinuous distorted crystalline tracks of ~2 nm in diameter were observed in Al2O3 and continuous amorphous tracks were detected in YAG. These track structures in Al2O3 and YAG were confirmed by high resolution TEM data. The simulations enabled us to identify recrystallization as the dominant mechanism governing formation of detected tracks in these oxides.
Permanent Link: http://hdl.handle.net/11104/0305766