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Improvement of GaN crystalline quality by SiN.sub.x./sub. layer grown by MOVPE
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SYSNO ASEP 0520842 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Improvement of GaN crystalline quality by SiNx layer grown by MOVPE Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Slavická Zíková, Markéta (FZU-D)
Hubáček, Tomáš (FZU-D) ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Hájek, František (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Vetushka, Aliaksi (FZU-D) RID, ORCID
Hasenöhrl, S. (SK)Number of authors 9 Source Title Lithuanian Journal of Physics. - : Lithuanian Academy of Sciences Publishers - ISSN 1648-8504
Roč. 59, č. 4 (2019), s. 179-186Number of pages 8 s. Language eng - English Country LT - Lithuania Keywords dislocations ; MOVPE ; GaN ; SiNx ; photoluminescence Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-11769S GA ČR - Czech Science Foundation (CSF) TH02010014 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000505595100002 EID SCOPUS 85078539856 DOI 10.3952/physics.v59i4.4134 Annotation In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying GaN layers. The SiNx interlayer is very effective when the original dislocation density is high, while in the case of lower dislocation density the deposition of SiNx is not effective for crystal quality improvement. The most probable mechanism is the annihilation of bended neighbouring dislocations during the coalescence of 3D islands. The SiNx layer cannot serve as a barrier for dislocations, since it is probably dissolved during the following GaN growth and dissolved Si atoms are incorporated into the above-grown GaN layer which stimulates the 3D island formation. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020 Electronic address http://hdl.handle.net/11104/0305500
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