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Non-diffusional growth mechanism of I-1 basal stacking-faults inside twins in hcp metals
- 1.0509770 - ÚFM 2020 RIV GB eng J - Journal Article
Ostapovets, Andriy - Serra, A. - Pond, R. C.
Non-diffusional growth mechanism of I-1 basal stacking-faults inside twins in hcp metals.
Scripta Materialia. Roč. 172, NOV (2019), s. 149-153. ISSN 1359-6462. E-ISSN 1872-8456
R&D Projects: GA ČR(CZ) GA18-07140S; GA MŠMT(CZ) LQ1601
Institutional support: RVO:68081723
Keywords : twinning dislocations * 10(1)over-bar2 twin * magnesium * defects * interface * Twinning * Plastic deformation * Grain interfaces * Interface defects * Dislocations
OECD category: Materials engineering
Impact factor: 5.079, year: 2019
Method of publishing: Limited access
https://www.sciencedirect.com/science/article/pii/S1359646219304324?via%3Dihub
Deformation twins in magnesium exhibit considerable densities of I-1 basal-plane stacking-faults. Since these faults generally transect their host twin, they presumably lengthen concommitantly with boundary migration during twin growth. We investigate this process using atomic-scale simulation for {10 (1) over bar2} and {10 (1) over bar1} twinning. It is demonstrated first that the intersection of a stacking-fault with a stationary twin boundary is delineated by a sessile imperfect disconnection. Subsequently, by applying a shear strain, we stimulate twin growth by the passage of twinning disconnections along twin boundaries, and show that these are able to propagate through such pre-existing imperfect disconnections in a conservative manner. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.
Permanent Link: http://hdl.handle.net/11104/0300839
Number of the records: 1